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LHF32KZR
6.2.3 DC CHARACTERISTICS
Following is the current consumption of one bank.
For the current consumption of one device total, please refer to the Note 8.
DC Characteristics
37
V CC =2.7V
V CC =3.3V
V CC =5V
Test
Sym.
I LI
I LO
Parameter
Input Load Current
Output Leakage
Current
Notes Typ.
1
1
Max.
±0.5
±0.5
Typ.
Max.
±0.5
±0.5
Typ.
Max. Unit
±1
μA
±10
μA
Conditions
V CC =V CC Max.
V IN =V CC or GND
V CC =V CC Max.
V OUT =V CC or GND
I CCS
V CC Standby Current
1,3,6,8
CMOS Inputs
20
100
20
100
25
100
μA
V CC =V CC Max.
BE#=RP#=V CC ±0.2V
TTL Inputs
1
4
1
4
2
4
mA
V CC =V CC Max.
BE#=RP#=V IH
I CCD
V CC Deep Power-
Down Current
1
15
15
15
μA
RP#=GND±0.2V
I OUT (STS)=0mA
I CCR
V CC Read Current
1,5,6,8
CMOS Inputs
V CC =V CC Max.
25
25
50
mA
BE#=GND
f=5MHz(3.3V, 2.7V),
8MHz(5V)
I OUT =0mA
TTL Inputs
V CC =V CC Max.
30
30
65
mA
BE#=V IL
f=5MHz(3.3V, 2.7V),
8MHz(5V)
I CCW
V CC Write Current
1,7,8
17
?
?
?
?
mA
I OUT =0mA
V PP =2.7V-3.6V
((Multi) W/B Write or
17
17
?
?
mA
V PP =3.3V±0.3V
I CCE
Set Block Lock Bit)
V CC Erase Current
1,7,8
17
17
?
17
?
?
35
?
mA
mA
V PP =5.0V±0.5V
V PP =2.7V-3.6V
(Block Erase, Bank
Erase, Clear Block
Lock Bits)
17
17
17
17
?
?
30
mA
mA
V PP =3.3V±0.3V
V PP =5.0V±0.5V
I CCWS
I CCES
I PPS
I PPR
I PPD
I PPW
V CC Write or Block
Erase Suspend Current
V PP Standby Current
V PP Read Current
V PP Deep Power-Down
Current
V PP Write Current
1,2,8
1
1
1
1,7,8
1
±2
10
0.1
6
±15
200
5
80
1
±2
10
0.1
?
6
±15
200
5
?
1
±2
10
0.1
?
10
±15
200
5
?
mA
μA
μA
μA
mA
BE#=V IH
V PP ≤ V CC
V PP >V CC
RP#=GND±0.2V
V PP =2.7V-3.6V
((Multi) W/B Write or
80
80
?
?
mA
V PP =3.3V±0.3V
I PPE
Set Block Lock Bit)
V PP Erase Current
1,7,8
80
40
?
80
?
?
80
?
mA
mA
V PP =5.0V±0.5V
V PP =2.7V-3.6V
(Block Erase, Bank
Erase, Clear Block
Lock Bits)
40
40
40
40
?
?
40
mA
mA
V PP =3.3V±0.3V
V PP =5.0V±0.5V
I PPWS
I PPES
V PP Write or Block
Erase Suspend Current
1,8
10
200
10
200
10
200
μA
V PP =V PPH1/2/3
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